Intel and Micron sample 50nm and flash memory devices
The samples were manufactured through IM Flash Technologies, a joint development and manufacturing venture from Micron and Intel. Both companies are sampling 4Gb devices now, with plans to mass produce a range of densities on the 50nm node in 2007.
This move to 50nm process technology is intended to enable Intel and Micron to meet the growing demand for higher density NAND flash across a range of computing and consumer electronics applications, such as digital music players, removable storage and handheld communications devices. According to industry research forecasts, the NAND market segment is estimated to reach $13 to $16bn in 2006, and grow to approximately $25 to $30bn by 2010.
“Micron entered the NAND business in 2004 using a 90nm process,” says Brian Shirley, Micron vice-president of memory. “Micron will continue its commitment to NAND with a rapid transition to the 50nm process, and through continued work on advanced nodes, for the introduction of even higher density products.”
“Our entry into the NAND flash business has been an incredibly fast ramp,” says Brian Harrison, vice-president and GM, Flash Memory Group, Intel. “We started shipping products to customers in the first quarter of this year, and we are seeing very high demand across multiple flash densities. Working with Micron, we are poised to transition quickly to the 50nm process technology and beyond.”
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