Samsung has started producing what it says is the industry’s first 256-gigabit (Gb), three-dimensional Vertical NAND (V-NAND) flash memory.
The chips are based on 48 layers of 3-bit multi-level-cell arrays for use in solid state drives (SSDs).
This is the third generation of Samsung’s V-NAND flash memory technology, and the company said it doubles the density of conventional 128Gb NAND flash chips.
Samsung’s 256Gb 3D V-NAND flash equates to 32 gigabytes (GB) of storage on a single die, and the Korean electronics maker said the new chip will easily double the capacity of Samsung’s existing SSDs.
Currently, Samsung offers a top-of-the-range 2TB SSD, meaning it could “easily” double that to 4TB in its new SSD line-up.
Samsung plans to produce third-generation V-NAND tech throughout the remainder of 2015.