Samsung has started mass producing the industry’s first 4GB DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface.
This DRAM was developed for use in high performance computing (HPC), advanced graphics and network systems, as well as enterprise servers.
Samsung’s new HBM solution is seven times faster than the current DRAM performance limit, said the company.
This higher speed allows for faster responsiveness for high-end computing tasks – including parallel computing, graphics rendering, and machine learning.
The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8-gigabit core dies on top. These are then vertically interconnected by TSV holes and microbumps.
A single 8Gb HBM2 die contains over 5,000 TSV holes, which is more than 36 times that of an 8Gb TSV DDR4 die.
Samsung’s new DRAM package features 256GBps of bandwidth, which is double that of an HBM1 DRAM package.